MS8250-P2920 Datasheet, PDF (1/2 Pages) Microsemi Corporation – GaAs Schottky Diodes Flip Chip Anti Parallel Low RS

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®
Dimensions
Size: 26 x 13 mils
Thickness: 5 mils
Bond Pad Size: 5 x 8 mils
Features
● _{Capacitance (65 fF Typ.)}
● _{Low Series Resistance (3  Typ.)}
● _{Cut-Off Frequency > 500 GHz}
● _{Large Gold Bond Pads}
Specifications @ 25°C
(Per Junction)
● _{VF (1 mA): 650–750 mV}
● _{VF (1 mA): 10 mV Max.}
● _{RS (10 mA): 7  Max.}
● _{IR (3 V): 10 A Max.}
● _{CT (0 V): 80 fF Max.}
Maximum Ratings
Insertion Temperature
250°C for 10 Seconds
Incident Power
+20 dBm @ 25°C
Forward Current
15 mA @ 25°C
Reverse Voltage
3V
Operating Temperature
-55°C to +125°C
Storage Temperature
-65°C to +150°C
GaAs Schottky Diodes
Flip Chip Anti Parallel Low R_S
MS8250 – P2920
Description
The MS8250 is a GaAs flip chip anti-parallel pair
Schottky device designed for use as harmonic mixer
elements at microwave and millimeter wave
frequencies. Their high cut-off frequency insures good
performance at frequencies to 100 GHz. Applications
include: transceivers, digital radios and automotive
radar detectors.
These flip chip devices incorporate Microsemi’s
expertise in GaAs material processing, silicon nitride
protective coatings and high temperature metallization.
They have large, 5 x 8 mil, bond pads for ease of
insertion. The MS8250 is priced for high volume
commercial and industrial applications.
Copyright  2008
Rev: 2008-12-29
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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