MS8250-48 Datasheet, PDF (1/2 Pages) Microsemi Corporation – SCHOTTKY DIODES TM Silicon Low Barrier

SCHOTTKY DIODES
TM
®
Silicon Low Barrier
MS8250 – 48
Features
● _{For Detector and Mixer Applications}
● _{Vertical Offset Contact}
● _{Low Capacitance Package (0.09 pF)}
● _{Available as Bondable Chips}
● _{Priced for Commercial Applications}
Specifications @ 25°C
● _{VF (1 mA): 0.39 V Max.}
● _{VB (10 A): 3 V Min.}
● _{IR (1 V): 100 nA Max.}
● _{RS (1 mA): 8  Typ.}
● _{CT (0 V, 1 MHz): 0.24 pF Max., 0.20 pF Typ.}
Maximum Ratings
Incident Power
Reverse Voltage
Forward Current
Power Dissipation
Operating Temperature
Storage Temperature
+20 dBm @ 25°C
3V
10 mA @ 25°C
50 mW @ 25°C
-65°C to +150°C
-65°C to +150°C
Description
The MS8520-48 is low barrier, N-type, silicon Schottky
diode designed for applications in microwave mixers and
detectors at frequencies from below 100 MHz to
beyond 40 GHz.
These Schottky diodes are packaged in the newly
developed ultra-low capacitance M48 package that has
shown improved sensitivity in Doppler Transceiver
mixer/detector mounts at 24 GHz.
Microsemi’s vertical offset chip bond pad design
allows rotational symmetry in a waveguide mount and
rugged bonding to the top contact without damage to the
junction. MSC’s semiconductor process also results in
a low 1/F noise device with low specified R_S and C_J
values.
Copyright  2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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