MS8150-P2613 Datasheet, PDF (1/2 Pages) Microsemi Corporation – GaAs Schottky Devices Low RS Flip Chip

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®
Dimensions
Size: 26 x 13 mils
Thickness: 5 mils
Bond Pad Size: 5 x 8 mils
Features
● _{Capacitance (65 fF Typ.)}
● _{Low Series Resistance (3  Typ.)}
● _{Cut-off Frequency > 500 GHz}
● _{Large Gold Bond Pads}
Specifications @ 25°C
(Per Junction)
● _{VF (1 mA): 650–750 mV}
● _{RS (10 mA): 7  Max.}
● _{IR (3 V): 10 A Max.}
● _{CT (0 V): 80 fF Max.}
Maximum Ratings
Insertion Temperature
Incident Power
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
250°C for 10 Seconds
+20 dBm @ 25°C
15 mA @ 25°C
3V
-55°C to +125°C
-65°C to +150°C
GaAs Schottky Devices
Low R_S Flip Chip
MS8150 - P2613
Description
The MS8150-P2613 is a GaAs flip chip Schottky diode
designed for use as mixer and detector elements at
microwave and millimeter wave frequencies. Their
high cut-off frequency insures good performance at
frequencies to 100 GHz. Applications include:
transceivers, digital radios and automotive radar
detectors.
These flip chip devices incorporate Microsemi’s
expertise in GaAs material processing, silicon nitride
protective coatings and high temperature metallization.
They have large, 5 x 8 mil, bond pads for ease of
insertion. The MS8150-P2613 is priced for high volume
commercial and industrial applications.
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
These devices are ESD sensitive and must be handled using ESD precautions.
1 _{The MS8150 Series of products are}
. supplied with a RoHS complaint Gold finish
Copyright  2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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