MS8001 Datasheet, PDF (1/3 Pages) Microsemi Corporation – GaAs Schottky Diodes

TM
®
Packaged and Bondable Chips
GaAs Schottky Diodes
MS8001 – MS8004
Features
● _{Low-Noise Performance}
● _{High Cut-off Frequency}
● _{Passivated to Enhance Reliability}
● _{Packaged Diodes and Bondable Chips}
Applications
● _{Single and Balanced Mixers and Detectors}
● _{Transceivers X, K and Ka Bands}
● _{30 and 60 GHz Radios}
● _{Automotive Radar Detectors}
Maximum Ratings
Incident Power
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
100 mW @ 25°C
Derate Linearly to 0 at 175°C
15 mA @ 25°C
5V
-55°C to +175°C
-55°C to +200°C
Description
Microsemi’s MS8000 series of GaAs Schottky barrier
diodes are available in packaged form and bondable
chip configurations. These Schottky devices have low
series resistance and low junction capacitance. The
resulting low noise figure makes these diodes suitable
for sensitive mixer and detector applications from
below X band to beyond Ka band frequencies.
Ordering Information
P00 is the designation for the bondable chip Schottky (e.g.
MS8001-P00). Packaged diodes are designated by the
package outline number (e.g. MS8001-30)
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
These devices are ESD sensitive and must be handled using ESD precautions.
1 _{The MS8000 Series of products are}
. supplied with a RoHS complaint Gold finish
Copyright  2008
Rev.: 2009-02-17
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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