MS652 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS

MS652/MS652S
5.0 Watts, 12.5 Volts, Class C
UHF Applications
GENERAL DESCRIPTION
The MS652/MS652S is a common emitter and 12.5V Class C epitaxial silicon
NPN planar transistor designed primarily for UHF communications. It withstands
severe mismatch under normal operating conditions.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25°C
BV_CBO
BV_CEO
BV_EBO
I_C
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Storage Temperature
Operating Junction Temperature
25 Watts
36 Volts
16 Volts
4.0 Volts
2.0 Amps
-65 to +150 °C
+200 °C
.280 4L STUD(M122), Epoxy sealed
MS652
.280 4LSL (M123), Epoxy sealed
MS652S
FUNCTIONAL CHARACTERISTICS @ 25°C
SYMBOL
P_OUT
P_IN
G_P
η
CHARACTERISTICS
Power Out
Power Input
Power Gain
Efficiency
TEST CONDITIONS
F = 512 MHz
V_CE = 12.5V
P_OUT = 5W
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
BV_CES
BV_CEO
BV_CBO
BV_EBO
I_CES
h_FE
C_OB
θjc¹
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Emitter Leakage
DC – Current Gain
Output Capacitance
Junction-Case Thermal Resistance
NOTES: 1. At rated output power with MSC fixture.
Rev. A: May. 2010
TEST CONDITIONS
I_C = 25 mA, V_BE = 0
I_C = 50 mA, I_B = 0
I_C = 25 mA, I_E = 0
I_E = 5 mA, I_C = 0
V_CE = 15 V, V_BE = 0
I_C = 200 mA, V_CE = 5 V
F = 1MHz, V_CB = 15V
MIN
5.0
-
10.0
60
MIN
36
16
36
4.0
-
10
-
-
TYP
-
-
-
-
MAX
-
0.5
-
-
UNITS
W
W
dB
%
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
-
1.0
150
15
7
UNITS
V
V
V
V
mA
-
pF
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.