MS3022 Datasheet, PDF (1/5 Pages) Microsemi Corporation – 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz

MS3022
1 Watts, 28 Volts
Class-C, CW 1.0 to 2.0 GHz
GENERAL DESCRIPTION
The MS3022 is a common base silicon NPN transistor designed for Class-C
general purpose microwave applications. The device is capable of withstanding an
infinite load VSWR under rated conditions. The MS3022 is particularly suited for
microwave communication links in the 1.0 to 2.0 GHz frequency ranges.
Features
• GOLD METALLIZATIOM
• P_OUT = 1.0 W MINIMUM
• G_P = 7.0 dB
• COMMON BASE
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P_d)
7 W (At rated pulse condition)
Voltage and Current
Collector to Base Voltage (BV_CES)
Emitter to Base Voltage (BV_EBO)
Collector Current (I_C)
45 V
3.5 V
0.2 A
Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature +200 °C
CASE OUTLINE
.250 2LFL M210
(Common Base)
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
BV_CEO
BV_CBO
BV_EBO
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
I_C = 5 mA, R_BE = 50 Ω
I_C = 1 mA, I_B = 0 mA
I_E = 1 mA, I_C = 0 mA
I_CBO
Collector to Base Leakage
V_CB = 28.0 V
H_FE
DC – Current Gain
θjc¹
Thermal Resistance
I_C = 0.1A, V_CE = 5V
NOTES: 1. At rated output power, pulse conditions and MSC fixture
Rev. A : Oct. 2009
MIN
45
45
3.5
15
TYP
MAX
0.5
120
25
UNITS
V
V
V
mA
-
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.