MS2553C Datasheet, PDF (1/5 Pages) Microsemi Corporation – 35 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz

MS2553C
35 Watts, 50 Volts
Pulsed Avionics 1025 to 1150 MHz
GENERAL DESCRIPTION
The MS2553C is a medium power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1025-1150 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest MTTF.
The transistor includes input prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P_d)
175 W (At rated pulse condition)
Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
65 V
3.5 V
4.0 A
Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature +200 °C
CASE OUTLINE
M220
(Common Base)
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
BV_EBO
BV_CBO
BV_CEO
h_FE
θjc^1,2
CHARACTERISTICS
Emitter - Base Breakdown
Collector - Base Breakdown
Collector - Emitter Breakdown
DC – Current Gain
Thermal Resistance
TEST CONDITIONS
Ie = 10mA
Ic = 20mA
Ic = 20mA
Ic = 500mA, Vce = 5V
FUNCTIONAL CHARACTERISTICS @ 25°C, Vcc = 50V
P_OUT
Power Out
P_IN
Power Input
G_p
Power Gain
η_C
Collector Efficiency
P_d
Pulse Droop
?á
Load Mismatch
F = 1025/1090/1150 MHz,
PW = 10µsec, DF = 1%,
P_IN = 3.2W
NOTES: 1. At rated output power and pulse conditions
2. Pulse Format: PW=10µs, DF=1%
Rev. A – May. 2008
MIN TYP
3.5
65
25
20
MAX
0.5
UNITS
V
V
V
-
°C/W
35
W
3.2
W
10.5
dB
40
%
1
dB
10:1
-
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