MS2552 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

RF PRODUCTS DIVISION
MS2552
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
The MS2552 device is a high power pulsed transistor specifically
designed for DME/TACAN avionics applications.
This device is capable of withstanding an infinite load VSWR at any phase
angle under full rated conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high reliability and product
consistency.
The MS2552 is housed in the industry-standard AMPAC metal/ceramic
hermetic package with internal input/output matching structures.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Refractory/Gold
Metallization
Emitter Ballasted
Ruggedized VSWR ∞ :1
Capability
Input/Output Matching
Overlay Geometry
Metal/Ceramic Hermetic
Package
P_OUT = 325 W Min.
G_P = 6.7 dB Gain
APPLICATIONS/BENEFITS
Avionics Applications
Symbol
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Parameter
Value
Unit
P_{DISS Power Dissipation* (TC ≤ 100°C)}
880
W
I_C
Device Current*
24
A
V_CC Collector-Supply Voltage*
55
V
T_J
Junction Temperature (Pulsed RF Operation)
250
°C
T_STG Storage Temperature
-65 to +150 °C
R_TH(j-c)
THERMAL DATA
Junction-Case Thermal Resistance
Applies only to rated RF amplifier operation
0.17
°C/W
Copyright  2000
MSC1665.PDF 2001-01-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
Page 1