MS2475 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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18936-1013
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RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• DESIGNED FOR HIGH POWER PULSED IFF
• 720 WATTS (min.) IFF 1030 or 1090 MHz
• REFRACTORY GOLD METALLIZATION
• 6.8 dB MIN. GAIN
• LOW THERMAL RESISTANCE FOR RELIABILTY AND
RUGGEDNESS
• 30:1 LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
• INPUT MATCHED, COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2475 is a silicon NPN power transistor designed for IFF
applications. The MS2475 is designed to exceed the high peak
power requirements of today's IFF systems. Hermetic sealing,
gold metalization and internal input matching provide superior
long term reliability and broadband performance.
MS2475
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CC
Collector-Supply Voltage*
I_C
P_DISS
Device Current*
Power Dissipation*
(T_C ≤ 100°C)
T_J
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance*
* Applies only to rated RF operation.
MSC0937A.DOC 10-20-98
Value
55
45
1670
+200
- 65 to + 200
0.06
Unit
V
A
W
°C
°C
°C/W