MS2473 Datasheet, PDF (1/2 Pages) Microsemi Corporation – high power COMMON BASE bipolar transistor.

MS2473
600 Watts, 50 Volts, Pulsed
Avionics 1090 MHz
GENERAL DESCRIPTION
The MS2473 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the 1090MHz frequency band. The device has
gold thin-film metallization for proven highest MTTF. Low thermal resistance
packaging reduces the junction temperature and extends device lifetime.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC²
2300 Watts
Maximum Voltage and Current
BVcbo Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
65 Volts
3.5 Volts
46 Amps
- 65 to + 150^oC
+ 200^oC
CASE OUTLINE
M112
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η_c
RL_IN
Power Out
Power Input = 150W
Power Gain
Collector Efficiency
Input Return Loss
F = 1090 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
600
150
6.0
35
10
Watts
Watts
dB
%
dB
BVebo
BVcbo
Ices
h_FE
Θjc²
Emitter to Base Breakdown
Collector to Base Breakdown
Collector to Emitter Leakage
DC - Current Gain
Thermal Resistance
Ie = 10 mA
Ic = 25 mA
Vce = 50V
Vce = 5V, Ic = 1A
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
3.5
Volts
65
Volts
35
mA
5
200
0.06
C/W
Initial , January 2007
Microsemi – PPG reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.microsemi.com or contact our factory direct.