MS2393 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

RF PRODUCTS DIVISION
MS2393
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
The MS2393 is a gold metallized, silicon NPN power transistor.
The MS2393 is designed for applications requiring high peak power
and low duty cycles such as IFF, DME and TACAN. The MS2393 is
packaged in a metal/ceramic package with internal input/output
matching, resulting in improved broadband performance and low
thermal resistance.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
Value
Unit
V_CBO Collector-Base Voltage
65
V
V_CES
Collector-Emitter Voltage
65
V
V_EBO
Emitter-Base Voltage
3.5
V
I_C
Device Current
11
A
P_DISS
Power Dissipation
583
W
T_J
Junction Temperature
+200
°C
T_STG
Storage Temperature
-65 to +150 °C
THERMAL DATA
R_{TH(j-c) Junction-Case Thermal Resistance}
0.30
°C/W
KEY FEATURES
Designed For High
Power Pulse IFF, DME,
and TACAN
Applications
200 W (typ.) IFF 1030 –
1090 MHz
150 W (min.) DME 1025
– 1150 MHz
140 W (typ.) TACAN
960 – 1215 MHz
8.2 dB Gain
Refractory Gold
Metallization
Ballasting And Low
Thermal Resistance For
Reliability And
Ruggedness
30:1 Load VSWR
Capability At Specified
Operating Conditions
Input And Output
Matched Common Base
Configuration
APPLICATIONS/BENEFITS
Avionics Applications
Copyright  2000
MSC1660.PDF 2001-01-30
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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