MS2215 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• REFRACTORY/GOLD METALLIZATION
• EMITTER SITE BALLASTED
• LOW THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• P_OUT = 150 W MIN. WITH 7.5 dB Gain
DESCRIPTION:
The MS2215 is designed for specialized avionics applications,
including Mode-S, TCAS and JTIDS where power is provided
under pulse formats utilizing short pulse widths and high burst or
overall duty cycles.
MS2215
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
I_C
V_CC
T_J
T_STG
Parameter
Power Dissipation *
Device Current *
(T_C ≤ °C)
Collector - Supply Voltage *
Junction Temperature (Pulsed RF Operation)
Storage Temperature *
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance *
* Applies only to rated RF amplifier operation
MSC0921.PDF 9-23-98
Value
300
16.5
35
250
- 65 to + 200
0.57
Unit
A
V
°C
°C
°C/W