MS2213 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE TRANSISTORS
SPECIALITY AVIONICS/JTIDS APPLICATIONS
MS2213
Features
• REFRACTORY/GOLD METALLIZATION
• EMITTER SITE BALLASTED
• 15:1 VSWR CAPABILITY
• LOW RF THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• P_OUT = 30 W MIN. WITH 7.8 dB Gain
DESCRIPTION:
The MS2213 device is a high power Class C transistor specifically
designed for JTIDS pulsed output and driver applications.
The device is capable of operation over a wide range of pulse
widths, duty cycles and temperatures and is capable of
withstanding 15:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire
bonding techniques ensure high reliability and product
consistency.
The MS2213 is supplied in the hermetic metal/ceramic package
with internal input matching structures.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
I_C
V_CC
T_J
T_STG
Parameter
Power Dissipation *
Device Current *
(T_C ≤ 85°C)
Collector - Supply Voltage *
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
* Applies only to rated RF amplifier operation
MSC0920.PDF 9-23-98
Value
75
3.5
40
250
- 65 to + 200
2.2
Unit
W
A
V
°C
°C
°C/W