MS2211 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• REFRACTORY/GOLD METALLIZATION
• EMITTER SITE BALLASTED
• 5:1 VSWR CAPABILITY
• LOW THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• P_OUT = 6.0 W MIN. WITH 9.3 dB Gain
DESCRIPTION:
The MS2211 is designed for specialized avionics applications,
including JTIDS, where power is provided under pulse formats
utilizing short pulse widths and high burst or overall duty cycles.
MS2211
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
I_C
V_CC
T_J
T_STG
Parameter
Power Dissipation *
Device Current *
(T_C ≤ 75°C)
Collector - Supply Voltage *
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance *
* Applies only to rated RF amplifier operation
MSC0919.PDF 9-23-98
Value
25
0.9
32
250
- 65 to + 200
7.0
Unit
W
A
V
°C
°C
°C/W