MS2209_08 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MS2209
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• 225 MHz BANDWIDTH
• COMMON BASE
• GOLD METALLIZATION
• CLASS C OPERATION
• POUT = 90 W MIN. WITH 8.4 dB GAIN
DESCRIPTION:
The MS2209 is a broadband, high peak pulse power silicon NPN
bipolar device specifically designed for avionics applications requiring
broad bandwidth with moderate duty cycles and pulse width
constraints such as ground/ship based DME/TACAN.
This device is also designed for specialized applications including
JTIDS applications when duty cycle is moderately higher. Gold
metallization and emitter ballasting assure high reliability under Class
C amplifier operation.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CC
I_C
P_DISS
T_J
Collector Supply Voltage
Device Current
Power Dissipation
Junction Temperature (RF Pulsed Operation)
T_STG
Storage Temperature
Value
50
7.0
220
+200
-65 to +200
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
Rev B- September 2008
0.80
Unit
V
A
W
°C
°C
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
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