MS2209 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATION
Features
• REFRACTORY/GOLD METALIZATION
• LOW THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• EMITTER SITE BALLASTED
MS2209
DESCRIPTION:
THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND,
HIGH PEAK PULSE POWER DEVICE SPECIFICALLY DESIGNED
FOR AVIONICS APPLICATIONS REQUIRING BROAD BANDWIDTH
WITH MODERATED DUTY CYCLE AND PULSE WIDTH
CONSTRAINTS SUCH AS GROUND/SHIP BASED DME/TACAN.
THIS DEVICE IS ALSO CAPABLE OF SPECIALIZED
APPLICATIONS INCLUDING JTIDS WITH REDUCED POWER
UNDER PULSE FORMATS UTILIZING SHORT PULSE WIDTHS
AND HIGH BURST OR OVERALL DUTY CYCLES.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
I_C
V_CC
T_J
T_STG
Parameter
Power Dissipation* (T_C≤100ºC)
Device Current *
Collector Supply Voltage*
Junction Temperature
Storage Temperature
Value
220
7.0
50
250
-65 to +200
Thermal Data
R_TH(J-C)
Junction - Case Thermal Resistance
*Applies only to rated RF amplifier operation
0.80
MSC0930.PDF 10-13-98
Unit
W
A
V
°C
°C
°C/W