MS2208 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATION
Features
• HERMETIC METAL/CERAMIC PACKAGE
• LOW THERMAL RESISTANCE
• 10:1 LOAD VSWR CAPABILITY
• BALLASTED OVERLAY GEOMETRY
• COMMON EMITTER CONFIGURATION
MS2208
DESCRIPTION:
THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR
SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS
INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS
CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE
WIDTHS, DUTY CYCLES AND TEMPERATURES.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
I_C
V_CC
T_J
T_STG
Parameter
Power Dissipation* (T_C≤100ºC)
Device Current *
Collector Supply Voltage*
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Junction - Case Thermal Resistance
*Applies only to rated RF amplifier operation
Value
1360
27
55
250
-65 to +200
0.11
Unit
W
A
V
°C
°C
°C/W
MSC0926.PDF 10-09-98