MS2205 Datasheet, PDF (1/3 Pages) CIT Relay & Switch – DPDT Switch Function, 1000Vrms min Dielectric Strength

RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• 1025-1150 MHz
• GOLD METALLIZATION
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• Pout = 4 W MINIMUM
• G_P= 10 dB
• COMMON BASE CONFIGURATION
MS2205
.280 2LFL (M220)
Epoxy Sealed
DESCRIPTION:
The MS2205 is a common base, silicon NPN microwave transistor
designed for Class C driver applications under DME or IFF pulse
conditions. This device is capable of withstanding an infinite load
VSWR at any phase angle under rated conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
V_CE
T_J
I_C
T_STG
Parameter
Power Dissipation
Collector-Emitter Bias Voltage
Junction Temperature
Device Current
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance*
Revision 1
Value
7.5
37
200
1.0
-65 to +200
35
Unit
W
V
ºC
A
ºC
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein
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