MS1578 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS 800-960MHz CELLULAR BASE STATION

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE TRANSISTORS
800-960MHz CELLULAR BASE STATION
Features
• GOLD METALLIZATION
• DESIGNED FOR LINEAR OPERATION HIGH SATURATED
POWER CAPABILITY
• POUT = 150 W PEP
• INTERNAL INPUT/OUTPUT MATCHING
• COMMON EMITTER CONFIGURATION
• 8.0dB GAIN @ 900 MHz
• MAX IMD -28dBc @ 150 W PEP
• 5:1 VSWR CAPABILITY @ RATED CONDITIONS
• 3 dB OVERDRIVE CAPABILITY
DESCRIPTION:
THE MS1578 IS A GOLD METALLIZED, EPITAXIAL SILICON, NPN
PLANAR TRANSISTOR DESIGNED FOR HIGH LINEARITY CLASS AB
OPERATION. DIFFUSED EMITTER BALLAST RESISTORS PROVIDE
MAXIMUM RUGGEDNESS AND RELIABILITY FOR 900 MHz
CELLULAR BASE STATION APPLICATIONS.
MS1578
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
MSC0890.PDF
Value
28
65
3.5
25
300
+200
- 65 to + 150
0.60
Unit
V
V
V
A
W
°C
°C
°C/W