MS1510 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

RF PRODUCTS DIVISION
MS1510
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
The MS1510 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for broadband applications in the 450 –
512 MHz land mobile radio band. This device utilizes diffused emitter
resistors to withstand infinite VSWR at rated operating conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
!"470 MHz
!"12.5 Volts
!"Efficiency 55%
!"Common Emitter
!"P_OUT = 38 W Min.
!"G_P = 5.8 dB Gain
APPLICATIONS/BENEFITS
!"UHF Mobile
Applications
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
Value
Unit
V_CBO Collector-Base Voltage
36
V
V_CEO Collector-Emitter Voltage
16
V
V_EBO
Emitter-Base Voltage
4.0
V
I_C
Device Current
8.0
A
P_DISS
Power Dissipation
117
W
T_J
Junction Temperature
+200
°C
T_STG
Storage Temperature
-65 to +150 °C
.500 6LFL (M111)
EPOXY SEALED
THERMAL DATA
R_{TH(j-c) Junction-Case Thermal Resistance}
1.5
°C/W
41
23
Copyright  2000
MSC1627.PDF 2000-12-03
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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