MS1408 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

RF AND MICROWAVE TRANSISTORS
108-152MHz APPLICATIONS
Features
• FM CLASS C TRANSISTOR
• FREQUENCY 136MHz
• VOLTAGE 28V
• POWER OUT 20W
• POWER GAIN 8.2dB
• EFFICIENCY 55%
• COMMON EMITTER
DESCRIPTION:
The MS1408 is a 28 volt epitaxial silicon NPN planar transistor
designed for 108-152MHz AM class C and FM communications.
This device utilizes diffused emitter resisters to achieve VSWR at
rated operating conditions.
MS1408
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_DISS
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
65
V
35
V
65
V
4
V
3
A
30
W
+ 200
°C
- 65 to + 150
°C
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
5.83
°C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
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