MS1402 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

RF PRODUCTS DIVISION
MS1402
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications. This device
utilizes improved metallization to achieve infinite VSWR at rated
operating conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
!"450 - 512 MHz
!"12.5 Volts
!"Efficiency 55%
!"P_OUT = 2.0 W Min.
!"G_P = 10.0 dB Gain
APPLICATIONS/BENEFITS
!"UHF Mobile
Applications
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
Value
Unit
V_CBO Collector-Base Voltage
36
V
V_CEO Collector-Emitter Voltage
16
V
V_CES Collector-Emitter Voltage
36
V
V_EBO Emitter-Base Voltage
4.0
V
I_C
Device Current
0.75
A
P_DISS Power Dissipation
5
W
T_J
Junction Temperature
+200
°C
T_STG Storage Temperature
-65 to +150
°C
THERMAL DATA
R_{TH(j-c) Junction-Case Thermal Resistance}
35
°C/W
Copyright  2000
MSC1613.PDF 2000-11-06
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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