MS1226 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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18936-1013
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RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 28 VOLTS
• IMD = -28 dB
• P_OUT = 30 WATTS
• G_P = 18 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
MS1226
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
MSC0943.PDF 10-28-98
Value
65
36
4.0
4.5
80
+200
-65 to +150
2.2
Unit
V
V
V
A
W
°C
°C
° C/W