MS1078 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

RF PRODUCTS DIVISION
MS1078
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
The MS1078 is a Class AB epitaxial silicon NPN planar transistor
designed primarily for SSB and communications. This device utilizes
emitter ballasting to achieve extreme ruggedness under severe
operating conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
!"Optimized for SSB
!"30 MHz
!"28 Volts
!"IMD –30dB
!"Common Emitter
!"Gold Metallization
!"P_OUT = 130 W PEP
!"G_P = 12 dB Gain
APPLICATIONS/BENEFITS
!"HF SSB Applications
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
Value
Unit
V_CBO Collector-Base Voltage
70
V
V_CEO Collector-Emitter Voltage
35
V
V_EBO
Emitter-Base Voltage
4.0
V
I_C
Device Current
12
A
P_DISS
Power Dissipation
175
W
T_J
Junction Temperature
+200
°C
T_STG
Storage Temperature
-65 to +150
°C
THERMAL DATA
R_{TH(j-c) Junction-Case Thermal Resistance}
1.0
°C/W
Copyright  2000
MSC1611.PDF 2000-11-06
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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