MRF951 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Fully Implanted Base and Emitter Structure.
• High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz
• Low Noise Figure – 1.3dB @ 1GHz
• Ftau - 8.0 GHz @ 6v, 30mA
• Cost Effective Macro X Package
MRF951
Macro X
DESCRIPTION: Designed for use in high gain, low noise small-signal amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Tstg
Total Device Dissipation @ TC = 75ºC
Storage Junction Temperature Range
T_Jmax
Maximum Junction Temperature
Value
Unit
10
Vdc
20
Vdc
1.5
Vdc
100
mA
.475
-65 to +150
150
Watts
ºC
ºC
MSC1326.PDF 10-25-99