MRF904 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, high Frequency, To-72 packaged, Transistor
• High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz
7 dB (typ) @ f = 1 GHz
• Low Noise Figure
NF = 1.5 dB (typ) @ f = 450 MHz
• High F_T - 4 GHz (typ) @ IC = 15 mAdc
DESCRIPTION:
Designed primarily for use IN High Gain, low noise general purpose amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ T_A = 25ºC
Derate above 25ºC
MRF904
2
1
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
Value
15
25
3.0
30
200
1.14
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
MSC1324.PDF 10-25-99