MRF581 Datasheet, PDF (1/6 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Low Noise - 2.5 dB @ 500 MHZ
• High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package
MRF581/MRF581A
Macro X
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
P
D
Tstg
Total Device Dissipation @ TC = 50ºC
Derate above 50ºC
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Storage Junction Temperature Range
T_Jmax
Maximum Junction Temperature
MSC1318.PDF 10-25-99
MRF581 MRF581A
Unit
18
15
Vdc
30
Vdc
2.5
Vdc
200
mA
2.5
25
1.25
10
-65 to +150
150
Watts
mW/ ºC
Watts
mW/ ºC
ºC
ºC