MRF517 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF517
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• Gpe = 10 dB (typ) @ 60 mA, 300 MHz
• 3 GHz Current-Gain Bandwidth Product (min) @ 60mA
• Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; pre-
driver, driver, and output stages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ T_A = 25ºC
Derate above 25ºC
Value
20
35
3.0
150
2.5
0.02
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
MSC1302.PDF 10-25-99