MMBR5179LT1 Datasheet, PDF (1/1 Pages) Motorola, Inc – RF AMPLIFIER TRANSISTOR NPN SILICON

RF PRODUCTS DIVISION
MMBR5179LT1
RF & MICROWAVE TRANSISTORS
DESCRIPTION
The MMBR5179LT1 is a low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
! High FTau-1.4GHz
! Low noise-4.5dB@200MHz
! _{Low cost SOT23 package}
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 C)
Parameter
Value
Collector-Base Voltage
20
Collector-Emitter Voltage
12
Emitter-Base Voltage
2.5
Device Current
50
Power Dissipation
375
Junction Temperature
150
Storage Temperature
-55 to +150
Unit
V
V
V
mA
mW
C
C
THERMAL DATA
R_{TH(j-c) Junction-Case Thermal Resistance}
200
C/W
APPLICATIONS/BENEFITS
! LNA, Oscillator, Pre-Driver
SOT-23
MMBR5179LT1
Symbol
BV_CBO
BV_CEO
I_CBO
h_FE
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Test
I_C = .01mA
I_C =3mA
V_{EB = 15V}
V_CB = 1 V
Conditions
I_E = 0
I_B = 0
I_E = 0
I_C = 3 mA
Min. Typ.
20
12
25
Max.
0.02
Units
V
V
uA
Symbol
C_CB
FTau
NF
G_pe
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Test
Conditions
V_CB = 10 V _f = 1.0 MHz
V_CE = 6 V I_C= 5 mA _f = 200MHz
V_CE = 6 V I_C= 1.5 mA _f = 200MHz
V_CE = 6 V I_C= 5 mA _f = 200MHz
Min. Typ.
1.4
4.5
14
Max.
1.0
Units
PF
GHz
dB
dB
Copyright 2000
PDF 2000-11-06
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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