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MIV41001 Datasheet, PDF (1/1 Pages) Microsemi Corporation – MIV41001 ISIS Frequency Multiplier | |||
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TM
®
Features
â High Output Powers â Over 5 W at 35 GHz
â High Efficiency
â 2 and 3 Stack Options
â High Cut-Off Frequency
â Low Thermal Resistance
GaAs MULTIPLIER DIODES
ISIS Frequency Multiplier
MIV41001 â MIV41013
Applications
â Frequency Multipliers to Beyond 110 GHz
â High-Power mmW Transceivers
â mmW Phase Arrays
â Drivers for mm Power Amplifiers
ISIS Diode Schematic (2 Stack)
ohmic metal
P+ Layer
N Layer
N+ Layer
P+ Layer
N Layer
N+ Layer
Substrate
ohmic metal
Specifications @ 25°C
2 Stack ISIS Diodes â
Breakdown Voltage: 55 V Min.
Part
Number
Junction
Capacitance
@ Zero Bias
(pF)
Min.
6 V Cut-Off
Frequency
(GHz)
Typ.
Package
Capacitance
(pF)
MIV41001-21
0.1â0.3
1000
0.15
MIV41002-21
0.3â0.5
700
0.15
MIV41003-21
0.5â1.0
600
0.15
MIV41001-29
0.1â0.3
1000
0.10
MIV41002-29
0.3â0.5
700
0.10
MIV41003-29
0.5â1.0
600
0.10
Description
Microsemiâs ISIS frequency multiplier varactors are
fabricated by epitaxially stacking the P-N junctions in
GaAs to obtain high power at millimeter wave
frequencies. The MIV series of ISIS multiplier diodes
has been designed to have the high cut-off frequency to
produce very low conversion loss when used in
appropriately designed circuits. MSC offers 2 and 3
stacked devices to produce high CW power from 40â
110 GHz. CW power up to 3 W at 44 GHz
(conversion loss <3 dB) and 1 W in W band
(conversion loss <9 dB) are realizable with single
devices. ISIS diodes are offered in the low parasitic
(<10 fF), low thermal resistance M29 package and in
other packages.
3 Stack ISIS Diodes â
Breakdown Voltage: 75 V Min.
Part
Number
Junction
Capacitance
@ Zero Bias
(pF)
Min.
6 V Cut-Off
Frequency
(GHz)
Typ.
Package
Capacitance
(pF)
MIV41011-21
0.1â0.3
1000
0.15
MIV41012-21
0.3â0.5
700
0.15
MIV41013-21
0.5â1.0
600
0.15
MIV41011-29
0.1â0.3
1000
0.10
MIV41012-29
0.3â0.5
700
0.10
MIV41013-29
0.5â1.0
600
0.10
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
These devices are ESD sensitive and must be handled using ESD precautions.
. These products are supplied with a RoHS
complaint Gold finish
Other package styles are available on request.
Copyright ï£ 2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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