MG1041 Datasheet, PDF (1/2 Pages) Microsemi Corporation – GUNN Diodes Anode Heat Sink

TM
®
Features
● _{High Reliability}
● _{Low-Phase Noise}
● _{9.5–35.5 GHz Operation}
● _{Pulsed and CW Designs to 20 mW}
Applications
● _{Motion Detectors}
● _{Transmitters and Receivers}
● _Beacons
● _{Automotive Collision Avoidance Radars}
● _Radars
● _Radiometers
● _{Instrumentation}
GUNN Diodes
Anode Heat Sink
MG1041 – MG1059
Description
Microsemi’s GaAs Gunn diodes, epi-up (anode
heatsink), are fabricated from epitaxial layers grown
at MSC by the Vapor Phase Epitaxy technique. The
layers are processed using proprietary techniques
resulting in ultra- low phase and 1/f noise. The diodes
are available in a variety of microwave ceramic
packages for operation from 9.5–35.5 GHz.
Copyright  2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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