MG1001 Datasheet, PDF (1/4 Pages) Microsemi Corporation – GUNN Diodes Cathode Heat Sink

TM
®
Discrete Frequency: Cathode Heatsink
GUNN Diodes
Cathode Heat Sink
MG1001 – MG1061
Features
● _{CW Designs to 500 mW}
● _{Pulsed Designs to 10 W}
● _{Frequency Coverage Specified from 5.9–95 GHz}
● _{Low Phase Noise}
● _{High Reliability}
Applications
● _{Motion Detectors}
● _{Transmitters and Receivers}
● _Beacons
● _{Automotive Collision Avoidance Radars}
● _Radars
● _Radiometers
● _{Instrumentation}
Description
Microsemi’s GaAs Gunn diodes, epi-down (cathode
heatsink), are fabricated from epitaxial layers grown at
MSC by the Vapor Phase Epitaxy technique. The layers
are processed using proprietary techniques resulting in
low phase and 1/f noise. MDT Gunn diodes are
available in a variety of microwave ceramic packages
are available for operation from 5–110 GHz.
Copyright  2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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