MDS70 Datasheet, PDF (1/5 Pages) Microsemi Corporation – 70 Watts, 50 Volts, Pulsed Avionics 1030 - 1090MHz

MDS70
70 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090MHz
GENERAL DESCRIPTION
The MDS70 is a COMMON BASE bipolar transistor. It is designed for
MODE S pulsed systems in the frequency band 1030-1090 MHz. The device
has gold thin-film metallization for proven highest MTTF. The transistor
includes input prematch for broadband capacity. Low thermal resistance
package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC²
225 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
65 Volts
3.5 Volts
5.0 Amps
- 65 to + 150^oC
+ 200^oC
CASE OUTLINE
55CX, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pg
RT
η_c
VSWR¹
Power Out
Power Gain
Rise Time
Collector Efficiency
Load Mismatch Tolerance
F = 1030-1090 MHz
70
Vcc = 50 Volts
10.3
Pin = 6.5W
Pulse Mod: Mode S²
35
1090 MHz
5:1
95
11.65
80
Watts
dB
ns
%
BVebo
BVces
h_FE
θjc¹
Emitter to Base Breakdown
Ie = 5 mA
3.5
Collector to Emitter Breakdown Ic = 25 mA
65
DC - Current Gain
Ic = 500 mA, Vce = 5 V 20
Thermal Resistance
Volts
Volts
0.8
o_C/W
Notes: 1) At rated pulse conditions
Rev B: October 2009
2) Mode S Burst: 0.5us (on/off), N=128, Per=6.4ms; LTDC=1%
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.