MDS60L_11 Datasheet, PDF (1/4 Pages) Microsemi Corporation – 60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz

MDS60L
60 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The MDS60L is a high power COMMON BASE bipolar transistor. It is
designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band.
The transistor includes a double input prematch for broadband performance.
The device has gold thin-film metallization and diffused ballasting in a
hermetically sealed package for proven highest MTTF.
CASE OUTLINE
55AW Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25C¹
120 W
Maximum Voltage and Current
Collector to Emitter Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Peak Collector Current (I_c)
65 V
3.5 V
4A
Maximum Temperatures
Storage Temperature
-65 to +150 C
Operating Junction Temperature
+200 C
ELECTRICAL CHARACTERISTICS @ 25C
SYMBOL
P_out
P_in
P_g
_c
VSWR
Pd¹
Trise¹
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Pulse Droop
Rise Time
TEST CONDITIONS
F = 1030, 1090 MHz
Vcc = 50 Volts
PW = Note 2
DF = Note 2
FUNCTIONAL CHARACTERISTICS @ 25C
BV_ebo
BV_ces
BV_cbo
h_FE
jc¹
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
DC – Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 25 mA
Ic = 25 mA
Vce = 5V, Ic = 500 mA
NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS
NOTE 2: ELM Burst: 32µSec ON/ 18µSec OFF x 48, repeated at 23mSec
Rev C: Updated June 2011
MIN
60
10
TYP
34
MAX
6
2:1
0.8
100
UNITS
W
W
dB
%
dB
nSec
3.5
V
65
V
65
V
20
0.5 C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.