MDS150 Datasheet, PDF (1/3 Pages) Microsemi Corporation – 150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz

MDS150
150 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The MDS150 is a high power COMMON BASE bipolar transistor. It is
designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The
transistor includes input prematch for broadband performance. The device has
gold thin-film metallization and diffused ballasting in a hermetically sealed
package for proven highest MTTF.
CASE OUTLINE
55AW Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C¹
350 W
Maximum Voltage and Current
Collector to Emitter Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Peak Collector Current (I_c)
60 V
3.5 V
4A
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
P_out
P_in
P_g
η_c
VSWR¹
Pd¹
Trise¹
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Pulse Droop
Rise Time
TEST CONDITIONS
F = 1030, 1090 MHz
Vcc = 50 Volts
PW = Note 2
DF = Note 2
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
BV_ces
BV_cbo
h_FE
θjc¹
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
DC – Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 25 mA
Ic = 25 mA
Vce = 5V, Ic = 500 mA
NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS
NOTE 2: Burst: 0.5uS ON, 0.5uS OFF x 120, repeated every 6.4mS
MIN TYP MAX UNITS
150
W
20
W
10
dB
34
%
3:1
0.5 dB
100 nSec
3.5
V
60
V
60
V
20
0.5 °C/W
Initial Release - August 2007 Rev. A
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.