MDS140L Datasheet, PDF (1/5 Pages) Microsemi Corporation – 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz

MDS140L
140 Watts, 50 Volts
Pulsed Avionics 1030 to 1090 MHz
GENERAL DESCRIPTION
The MDS140L is a high power COMMON BASE bipolar transistor. It is designed
for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has
gold thin-film metallization and diffused ballasting for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE
55AW Style 1
(Common Base)
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P_d)
500 W (At rated pulse condition)
Voltage and Current
Collector to Base Voltage (BV_CES)
Emitter to Base Voltage (BV_EBO)
Collector Current (I_C)
70 V
3.0 V
12 A
Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
I_EBO
BV_CBO
BV_CES
I_CES
h_FE
θjc^1,2
CHARACTERISTICS
Emitter to Base Leakage
Collector to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Leakage
DC – Current Gain
Thermal Resistance
TEST CONDITIONS
V_EB = 3.0 V
I_C = 20 mA
I_C = 20 mA
V_CE = 50.0 V
I_C = 1A, V_CE = 5V
FUNCTIONAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
P_out
Power Out
P_in
Power Input
G_p
Power Gain
η_c
Collector Efficiency
P_d
Pulse Droop
T_r1
Rise Time
ψ
Load Mismatch
F = 1030/1090 MHz
V_CC = 50V
P_in = 15.7W
ELM Burst: 32us(On),
18us(Off), N=48,
Period=23ms
NOTES: 1. At rated output power, pulse conditions and MSC fixture
2. ELM Burst Pulse: 32us(On), 18us(Off), N=48, Period=23ms
Rev. A : Oct. 2008
MIN
70
70
20
TYP
0.15
MAX
4.5
3.0
UNITS
mA
V
V
mA
-
°C/W
MIN
140
9.5
50
TYP
MAX
15.7
0.5
100
2:1
UNITS
W
W
dB
%
dB
ns
-
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