LX5561 Datasheet, PDF (1/8 Pages) Microsemi Corporation – InGaAs - E-Mode pHEMT Low Noise Amplifier

LX5561
TM
® _{InGaAs – E-Mode pHEMT Low Noise Amplifier}
PRODUCTION DATA SHEET
DESCRIPTION
The LX5561 is a low noise amplifier The LNA is implemented with bias
(LNA) for WLAN applications in the circuit and input/output matching circuit
2.4-2.5 GHz frequency range. This on chip, resulting in simple external
LNA is manufactured with an InGaAs circuit on board. In addition, the on-
Enhancement mode pseudomorphic chip bias circuit provides stable
HEMT (E-pHEMT) process.
performance of gain, NF and current for
It operates with a single positive voltage variation compared to a general
voltage supply of 3.3V, with noise resistor-network bias circuit.
figure of 1.5dB while maintaining The LX5561 is available in a 12-pin
input third order intercept point(IIP3) 2mm x 2mm micro-lead package
of up to +6.5dBm.
(MLPQ-12L).
BLOCK DIAGRAM
Vdd
KEY FEATURES
ƒ 0.5µm InGaAs E-mode pHEMT
ƒ 2.4 – 2.5GHz Operation
ƒ Single 3.3V Supply
ƒ Gain ~ 13.0dB
ƒ Noise Figure ~ 1.5dB
ƒ Input IP3 ~ +6.5dBm
ƒ Input P1dB ~ +2.5dBm
ƒ On-Chip Bias Circuit
ƒ On-Chip Input/Output Match
ƒ 2mm x 2mm MLPQ-12L
ƒ Low Profile 0.5mm
APPLICATIONS
ƒ Wireless LAN 802.11b/g
ƒ WiMax
RF
Input
Input
Match
Bias
Circuit
Output
Match
RF
Output
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
PRODUCT HIGHLIGHT
Copyright © 2006
Rev. 1.0, 2006-12-20
PACKAGE ORDER INFO
LL
Plastic MLPQ
12 pin
RoHS Compliant / Pb-free
LX5561LL
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5561LL-TR)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
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