LX5560 Datasheet, PDF (1/8 Pages) Microsemi Corporation – InGaAs - E-Mode pHEMT Low Noise Amplifier

LX5560
TM
® _{InGaAs – E-Mode pHEMT Low Noise Amplifier}
PRODUCTION DATA SHEET
DESCRIPTION
The LX5560 is a low noise amplifier The LNA is implemented with bias
(LNA) for WLAN applications in the circuit and input matching circuit on
4.9-6.0 GHz frequency range. This chip, resulting in simple external
LNA is manufactured with an InGaAs circuit. In addition, the on-chip bias
Enhancement mode pseudomorphic circuit provides stable performance of
HEMT (E-pHEMT) process.
gain, NF and current for voltage
It operates with a single positive variation compared to a general
voltage supply of 3.3V, with noise resistor-network bias circuit.
figure(NF) of 1.7dB while maintaining The LX5560 is available in a 12-pin
input third order intercept point(IIP3) 2mmx2mm micro-lead package(MLPQ-
of up to +6dBm.
12L).
BLOCK DIAGRAM
Vdd
KEY FEATURES
ƒ 0.5µm InGaAs E-mode pHEMT
ƒ 4.9 - 6GHz Operation
ƒ Single 3.3V Supply
ƒ Gain ~ 12dB
ƒ Noise Figure ~ 1.7dB
ƒ Input IP3 ~ +6dBm
ƒ Input P1dB ~ +2dBm
ƒ On-Chip Bias Circuit
ƒ On-Chip Input Match
ƒ Simple Output Match
ƒ 2x2mm² MLPQ 12 Pin
ƒ Low Profile 0.5mm
APPLICATIONS
ƒ Wireless LAN 802.11a
ƒ WiMax
RF
Input
Input
Match
Bias
Circuit
RF
Output
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
PRODUCT HIGHLIGHT
•
560
645
Copyright © 2006
Rev. 1.0, 2006-12-20
PACKAGE ORDER INFO
LL
Plastic MLPQ
12 pin
RoHS Compliant / Pb-free
LX5560LL
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5560LL-TR)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
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