LX5553 Datasheet, PDF (1/3 Pages) Microsemi Corporation – 2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch

LX5553
TM
® _{2.4-2.5 GHz Front-End Module with Internally}
Matched Power Amplifier, LNA & SP3T Switch
PRODUCTION DATA SHEET
DESCRIPTION
LX5553 is a high-integration, high- provides about 25dB power gain, and
performance WLAN front-end module +17dBm linear output power, with
(FEM) for 802.11b/g/n and other EVM (<3%) for 64QAM/ 54Mbps
applications in the 2.4-2.5GHz OFDM. Both gain and power are
frequency range. LX5553 integrates readily measured at antenna port, with
an advanced InGaP/GaAs Hetero- the insertion loss of the SP3T switch
junction Bipolar Transistor (HBT) included.
power amplifier with on chip The Rx path of LX5553 features
impedance matching, a fully matched 13dB small-signal gain, noise figure of
low noise amplifier based on InGaAs 2.1dB, and high input referred third-
Enhancement mode pseudo-morphic order harmonic intercept point (IIP3) of
high electron mobility transistor (E- +5dBm, including the SP3T switch loss.
pHEMT) technology, and a Depletion The LNA consumes about 11mA
mode pHEMT (D-pHEMT) single- current with a single 3.6V supply.
pole triple-throw (SP3T) switch, all The Bluetooth path of LX5553
into a single package with 3x3mm features low insertion loss of 0.9dB and
footprint. LX5553 provides capability high input referred 1dB gain
of sharing a single antenna between compression point (IP_1dB) of +29dBm.
WLAN and Bluetooth systems LX5553 is available in a 16-pin, low
through the SP3T switch.
profile of 0.55mm, 3x3mm² micro-lead
The Tx path of LX5553 features a package (MLPQ-16L) in very low
two-stage monolithic microwave profile of 0.55mm. With its high level
integrated circuit (MMIC) power of functional integration, best-class
amplifier with active bias circuitry, performance, compact footprint and low
on-chip output power detector, and profile, LX5553 offers an ideal front-
50 input/output matching inside the end solution for the ever demanding
package. With 3.6V supply voltage design requirements of today’s highly
and 82mA bias current, the Tx path integrated mobile equipments, including
802.11b/g/n and Bluetooth applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
 2.4-2.5GHz 802.11b/g/n Front-
End Solution in a Single MLP
Package
 SP3T for Sharing Antenna
between WLAN and Bluetooth
systems
 All RF I/O Matched to 50 
 Single-Supply Voltage 3.0V to
4.2V
 Small Footprint: 3x3mm²
 Low Profile: 0.55mm
 RoHS Compliant & Pb-Free
TX Features :
 Power Gain ~ 25 dB*
 Pout ~ +17 dBm* for 3% EVM at
Antenna
 Current ~145 mA at +17 dBm*
 Pout ~ +21 dBm* for 11b 1Mbps
DSSS Mask Compliance
 Quiescent Current ~ 82 mA
RX Features :
 Gain ~ 13 dB*
 Noise Figure ~ 2.1 dB*
 IIP3 ~ +5 dBm*
Bluetooth Path :
 Insertion Loss ~ 0.9 dB
 IP1dB ~ +29 dBm
* Including SP3T switch loss
APPLICATIONS
 IEEE 802.11b/g/n
 Mobile Phone WLAN module
BLOCK DIAGRAM
Vref Vc1
PAOut/
Vc2 SwIn
Copyright  2010
Rev. 1.0, 2010-03-18
TxIn
Det
LNAOut
Vdd
BT
IMN*
PA
OMN*
LNA
Antenna
Port
*IMN:
Input Matching Network
*OMN:
Output Matching Network
CtrlTx / CtrlRx / CtrlBT
Microsemi
Analog Mixed Signal Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
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