LX5530 Datasheet, PDF (1/2 Pages) Microsemi Corporation – InGaP HBT 4.5 - 6.0GHz Power Amplifier

LX5530
TM
®
InGaP HBT 4.5 – 6.0GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5530 is a power amplifier The LX5530 also features an on-chip
optimized for the FCC Unlicensed power detector at the output port of the
National Information Infrastructure PA to help reduce BOM cost and PCB
(U-NII) band, HyperLAN2 and Japan space for implementation of power
WLAN applications in the 4.9 – 5.9 control in a typical wireless system. The
GHz frequency range. The PA is power detector is integrated with a
implemented as a three-stage monolithic temperature-compensated bias network
microwave integrated circuit (MMIC) and provides very stable response
with active bias, on-chip input across a wide range of output power
matching and output pre-matching. levels, over temperature extremes from
The device is manufactured with an -40 to +85°C.
InGaP/GaAs Heterojunction Bipolar The LX5530 is available in a 16-pin
Transistor (HBT) IC process 3mmx3mm micro-lead package (MLP).
(MOCVD). It operates with a single The compact footprint, low profile, and
positive voltage supply of 3 – 5V, excellent thermal capability makes the
with high power gain of up to 33dB. LX5530 an ideal solution for
When operated at 5V supply voltage, broadband, high-gain power amplifier
it provides up to +25dBm linear requirements for IEEE 802.11a, and
output power for 802.11a OFDM Hiperlan2 portable WLAN, as well as
spectrum mask compliance, and low the emerging 802.16 WiMAX
EVM of 3% for up to +23dBm output applications.
power in the 4.9-5.9GHz band.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
BLOCK DIAGRAM
Vc
RF
Input
Active Bias Network
Vref
RF
Output
Det
KEY FEATURES
ƒ Broadband 4.9 – 5.9GHz
Operation
ƒ Advanced InGaP HBT
ƒ Single-Polarity 3 – 5V Supply
ƒ Power Gain up to ~ 33dB for
V_C=5V, Icq = 250mA
ƒ Power Gain > ~28dB across 4.9-
5.85GHz
ƒ OFDM Mask Compliance Power
Pout ~ +25dBm over 4.9-
5.85GHz (ACPR ~ -50dBc @
±30MHz Offset)
ƒ Pout up to +23dBm with EVM
~3% (V_C = 5V)
ƒ EVM < ~2.5% for
Pout=+21dBm across 4.9-
5.85GHz (V_C = 5V)
ƒ EVM < ~2.5% for
Pout=+19dBm across 4.9-
5.85GHz (V_C = 4V)
ƒ Total Current ~250mA for Pout =
+20dBm, Duty Cycle = 99%
(V_C= 4V)
ƒ Complete On-Chip Input Match
ƒ Simple Output Match for Optimal
Broadband EVM
ƒ On-Chip RF Decoupling
ƒ Temperature-Compensated On-
Chip Output Power Detector
with Wide Dynamic Range
ƒ Small Footprint: 3x3mm
ƒ Low Profile: 0.9mm
APPLICATIONS
ƒ FCC U-NII Wireless
ƒ IEEE 802.11a
ƒ HiperLAN2
ƒ 5GHz Cordless Phone
ƒ IEEE 802.16 WiMAX
3X3MM MLP PACKAGE
MSC
5530
608Y
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16 pin
RoHS Compliant / Pb-free
LX5530LQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5530LQ-TR)
Copyright © 2000
Rev. 1.0a, 2006-09-12
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
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