LX5516 Datasheet, PDF (1/3 Pages) Microsemi Corporation – InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module

LX5516
® InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module
TM
PRODUCTION DATA SHEET
DESCRIPTION
The LX5516 is a power amplifier For 18dBm OFDM output power
module optimized for WLAN (64QAM, 54Mbps), the PAM provides a
applications in the 2.4-2.5GHz low EVM (Error-Vector Magnitude) of
frequency range. The PAM is 2.5%, and consumes 130mA total DC
implemented as a two-stage monolithic current.
microwave integrated circuit (MMIC) The LX5516 is available in a 12-pin
with on-chip active bias and 50 Ω 2x2mm micro-lead package (MLPQ-
impedance matched at both input and 12L). The compact footprint, ultra low
output.
profile, and thermal capability of the
The device is manufactured with an MLP package make the LX5516 an
InGaP/GaAs Heterojunction Bipolar ideal solution for high-gain power
Transistor (HBT) IC process amplifier requirements for IEEE
(MOCVD). With single low voltage 802.11b/g/n applications.
supply of 3.3V, it delivers 29dB power
gain between 2.4-2.5GHz, at a low
quiescent current of 80mA.
KEY FEATURES
Advanced InGaP HBT
2.4-2.5GHz Operation
Single-Polarity 3.3V Supply
Quiescent Current ~80mA
Power Gain ~ 29 dB
Pout=~+18dBm for 2.5% EVM,
OFDM 64QAM/54Mbps
Total Current ~130mA for Pout=
+18dBm
50Ω Input/Output Matching
On-chip Output Power Detector
Small Footprint: 2x2mm²
Ultra Low Profile:0.46mm
APPLICATIONS
IEEE 802.11b/g/n
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
BLOCK DIAGRAM
Vc
RF
Input
Input
Match_RF
Output
Match
RF
Output
Active Bias Network
Vcc
Vref
Det
2X2MM MLP PACKAGE
PACKAGE ORDER INFO
Plastic MLPQ
LL _{12 pin 2x2mm}
LX5516LL
Copyright © 2008
Rev 1.0, 2008-12-16
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5516LL-TR)
Microsemi
Analog Mixed Signal Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
Page 1