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LX5512E Datasheet, PDF (1/10 Pages) Microsemi Corporation – InGaP HBT 2.4 - 2.5 GHz Power Amplifier | |||
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LX5512E
TM
®
InGaP HBT 2.4 â 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5512E is a power amplifier For 19dBm OFDM output power
optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a
the 2.4-2.5 GHz frequency range. The low EVM (Error-Vector Magnitude) of
PA is implemented as a three-stage 3 %, and consumes 130 mA total DC
monolithic microwave integrated current.
circuit (MMIC) with active bias and The LX5512E is available in a 16-pin
input/output pre-matching. The device 3mmx3mm micro-lead package (MLP).
is manufactured with an InGaP/GaAs The compact footprint, low profile, and
Heterojunction Bipolar Transistor excellent thermal capability of the MLP
(HBT) IC process (MOCVD). It package makes the LX5512E an ideal
operates at a single low voltage supply solution for high-gain power amplifier
of 3.3V with 34 dB power gain requirements for IEEE 802.11b/g
between 2.4-2.5GHz, at a low applications.
quiescent current of 50 mA.
IMPORTANT: For the most current data, consult MICROSEMIâs website: http://www.microsemi.com
KEY FEATURES
 Advanced InGaP HBT
 2.4 â 2.5GHz Operation
 Single-Polarity 3.3V Supply
 Low Quiescent Current Icq
~50mA
 Power Gain ~34dB @ 2.45GHz
and Pout = 19dBm
 Total Current 130mA for Pout =
19dBm @ 2.45GHz OFDM
 EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
 Small Footprint (3 x 3 mm2)
 Low Profile (0.9mm)
APPLICATIONS
 IEEE 802.11b/g
PRODUCT HIGHLIGHT
Copyright  2000
Rev. 1.2, 2004-01-16
PACKAGE ORDER INFO
Plastic MLPQ
LQ 16 pin
LX5512E-LQ
Note: Available in Tape & Reel.
Append the letter âTâ to the part number.
(i.e. LX5512E-LQT)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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