LX5512B Datasheet, PDF (1/6 Pages) Microsemi Corporation – InGaP HBT 2.4 - 2.5 GHz Power Amplifier

LX5512B
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5512B is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range.
The PA is implemented as a three-
stage monolithic microwave
integrated circuit (MMIC) with active
bias and input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) IC process
(MOCVD). It operates at a single
low voltage supply of 3.3V with 32
dB power gain between 2.4-2.5GHz,
at a low quiescent current of 65mA.
For 19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3%, and consumes 140mA total DC
current.
The LX5512B is available in a 16-
pin 3mmx3mm micro-lead package
(MLP). The compact footprint, low
profile, and excellent thermal capability
of LX5512B meets the requirements of
high-gain power amplifiers for IEEE
802.11b/g applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
PRODUCT HIGHLIGHT
KEY FEATURES
ƒ Advanced InGaP HBT
ƒ 2.4-2.5GHz Operation
ƒ Single-Polarity 3.3V Supply
ƒ Low Quiescent Current I_CQ
~65mA
ƒ Power Gain ~ 32 dB at
2.45GHz & Pout=19dBm
ƒ Total Current ~140mA for
Pout=19dBm at 2.45 GHz
OFDM
ƒ EVM ~3 % for 64QAM/ 54Mbps
& Pout=19dBm
ƒ Small Footprint: 3x3mm2
ƒ Low Profile: 0.9mm
APPLICATIONS
ƒ IEEE 802.11b/g
LQ
PACKAGE ORDER INFO
Plastic MLPQ
16 pin
LX5512BLQ
Note: Available in Tape & Reel. Append the letters “TR” to the part number.
(i.e. LX5512BLQTR)
This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM)
testing. Appropriate ESD procedures should be observed when handling this device.
Copyright © 2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
Page 1