LX5511 Datasheet, PDF (1/2 Pages) Microsemi Corporation – InGaP HBT 2.3 - 2.5 GHz Power Amplifier

LX5511
TM
®
InGaP HBT 2.3 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The Microsemi LX5511 is a power For 20dBm OFDM output power
amplifier that is optimized for WLAN (64QAM, 54Mbps), the PA provides a
applications in the 2.3GHz – 2.5GHz low EVM (Error-Vector Magnitude) of
frequency range. The LX5511 Power less than 3.0%, and consumes 170mA
Amplifier is implemented as a two- total DC current..
stage monolithic microwave integrated The LX5511 is available in a 16-pin
circuit (MMIC) with active bias and 3mmx3mm micro-lead quad package
output pre-matching.
(MLPQ). The compact footprint, low
The device is manufactured with an profile, and thermal capability of the
InGaP/GaAs Heterojunction Bipolar MLPQ package makes the LX5511 an
Transistor (HBT) IC process ideal solution for medium-gain power
(MOCVD). With a single low voltage amplifier requirements for IEEE
supply of 3.3V 26dB power gain 802.11b/g applications
between 2.3-2.5GHz, at a low
quiescent current of 90mA.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
PRODUCT HIGHLIGHT
KEY FEATURES
ƒ Advanced InGaP HBT
ƒ 2.3-2.5GHz Operation
ƒ Single-Polarity 3.3V Supply
ƒ Quiescent Current 90mA
ƒ Power Gain 26 dB
ƒ Total Current 150mA for
Pout=18 dBm OFDM
ƒ EVM<3 %, 2.4% Typical
54Mbps/64QAM
ƒ Small Footprint: 3x3mm2
ƒ Height 0.9mm
APPLICATIONS
ƒ IEEE 802.11b/g
PACKAGE ORDER INFO
LQ`
Plastic MLPQ
16-Pin
RoHS Compliant / Pb-free
LX5511LQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5511LQ-TR)
Copyright © 2000
Rev. 1.0, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
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