LX5510 Datasheet, PDF (1/7 Pages) Microsemi Corporation – InGaP HBT 2.4-2.5 GHz Power Amplifier

INTEGRATED PRODUCTS
CONFIDENTIAL
LX5510
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRELIMINARY DATA SHEET
DESCRIPTION
The LX5510 is a power amplifier For +19dBm OFDM output power
optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a
the 2.4-2.5GHz frequency range. The low EVM (Error-Vector Magnitude) of
PA is implemented as a two-stage 3.0%, and consumes 120mA total DC
monolithic microwave integrated current with the nominal 3.3V bias.
circuit (MMIC) with active bias and With increased bias of 4.5V EVM is ~
input/output pre-matching.
5% at 23dBm.
The device is manufactured with an The LX5510 is available in a 16-pin
InGaP/GaAs Heterojunction Bipolar 3mmx3mm micro-lead package (MLP).
Transistor (HBT) IC process The compact footprint, low profile, and
(MOCVD). With single low voltage excellent thermal capability of the MLP
supply of 3.3V 20dB power gain package makes the LX5510 an ideal
between 2.4-2.5GHz, at a low solution for medium-gain power
quiescent current of 65mA.
amplifier requirements for IEEE
802.11b/g applications
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
ƒ Advanced InGaP HBT
ƒ 2.4 – 2.5GHz Operation
ƒ Single-Polarity 3.3V Supply
ƒ Low Quiescent Current Icq
~65mA
ƒ Power Gain ~20dB @ 2.45GHz
and Pout = 19dBm
ƒ Total Current 120mA for Pout =
19dBm @ 2.45GHz OFDM
ƒ EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
ƒ Small Footprint (3x3mm²)
ƒ Low Profile (0.9mm)
APPLICATIONS
ƒ IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER
INFO
Plastic MLPQ
LQ _{16 pin}
LX5510-LQ
Note: Available in Tape & Reel.
Append the letter “T” to the part number.
(i.e. LX5510-LQT)
Copyright  2003
Rev. 0.3g, 2003-05-08
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
Page 1