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LX5506M_09 Datasheet, PDF (1/2 Pages) Microsemi Corporation – InGaP HBT 4.5 – 6GHz Power Amplifier | |||
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CONFIDENTIAL
LX5506M
®
TM
InGaP HBT 4.5 â 6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5506M is a power amplifier linear output power for OFDM mask
optimized for the FCC Unlicensed compliance. It also features an on-chip
National Information Infrastructure output power detector to help reduce
(U-NII) band, HyperLAN2 and Japan BOM cost and board space in system
WLAN applications in the 4.9-5.9 implementation. The on-chip detector
GHz frequency range. The PA is allows simple interface with an external
implemented as a three-stage directional coupler, providing accurate
monolithic microwave integrated output power level readings insensitive
circuit (MMIC) with active bias, on- to frequency, temperature, and load
chip input matching and output pre- VSWR.
matching. The device is manufactured LX5506M is available in a 16-pin
with an InGaP/GaAs Heterojunction 3mmx3mm micro-lead package (MLP).
Bipolar Transistor (HBT) IC process The compact footprint, low profile, and
(MOCVD). It operates with a single excellent thermal capability of the MLP
positive voltage supply of 3.3V package makes LX5506M an ideal
(nominal), with up to +22dBm linear solution for broadband, high-gain
output power for 802.11a OFDM power amplifier requirements for IEEE
spectrum mask compliance, and low 802.11a, and Hiperlan2 portable WLAN
EVM of -30dB for up to +18dBm applications.
output power in the 4.9-5.9GHz band.
LX5506M features high gain of up
to 30dB with low quiescent current of
90mA, and high power added
efficiency of up to 20% at maximum
IMPORTANT: For the most current data, consult MICROSEMIâs website: http://www.microsemi.com
KEY FEATURES
 Broadband 4.9-5.9GHz Operation
 Advanced InGaP HBT
 Single-Polarity 3.3V Supply
 Power Gain ~ 30dB at 5.25GHz
 Power Gain > ~28dB across
4.9-5.9GHz
 EVM ~ -30dB at Pout=+17dBm
at 5.25GHz
 EVM ~ -30dB at Pout=+18dBm
at 5.85GHz
 Total Current ~140mA for Pout=
+17dBm at 5.25GHz (For High
Duty Cycle of 90%)
 Maximum Linear Power ~ +22dBm
for OFDM Mask Compliance
 Maximum Linear Efficiency ~ 20%
 On-chip Output Power Detector
with Improved Frequency and
Load-VSWR Insensitivity
 On-Chip Input Match
 On-Chip RF Decoupling
 Simple Output Match for Optimal
Broadband EVM
 Small Footprint: 3x3mm2
 Low Profile: 0.9mm
APPLICATIONS
 FCC U-NII Wireless
 IEEE 802.11a
 HiperLAN2
 5GHz Cordless Phone
PRODUCT HIGHLIGHT
MMSSCC
5550562M
841581AA
LQ
PACKAGE ORDER INFO
Plastic MLPQ
16 pin
RoHS Compliant / Pb-free
LX5506MLQ
Note: Available in Tape & Reel. Append the letters âTRâ
to the part number. (i.e. LX5506MLQ-TR)
Copyright © 2005
Rev. 1.0c, 2009-08-20
Microsemi
Analog Mixed Signal Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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