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LX5506M Datasheet, PDF (1/2 Pages) Microsemi Corporation – InGaP HBT 4.5 - 6GHz Power Amplifier | |||
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LX5506M
TM
®
InGaP HBT 4.5 â 6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5506M is a power amplifier of up to 20% at maximum linear output
optimized for the FCC Unlicensed power for OFDM mask compliance. It
National Information Infrastructure also features an on-chip output power
(U-NII) band, HyperLAN2, and detector to help reduce BOM cost and
Japanâs WLAN applications in the board space in system implementation.
4.9-5.9 GHz frequency range. The PA The on-chip detector allows simple
is implemented as a three-stage interface with an external directional
monolithic microwave integrated coupler, providing accurate output
circuit (MMIC) with active bias, on- power level readings insensitive to
chip input matching and output pre- frequency, temperature, and load
matching. The device is manufactured VSWR.
with an InGaP/GaAs Heterojunction LX5506M is available in a 16-pin
Bipolar Transistor (HBT) IC process 3mmx3mm micro-lead package (MLP).
(MOCVD). It operates with a single The compact footprint, low profile, and
positive voltage supply of 3.3V excellent thermal capability of the MLP
(nominal), with up to +22dBm linear package makes the LX5506M an ideal
output power for 802.11a OFDM solution for broadband, high-gain
spectrum mask compliance, and low power amplifier requirements for IEEE
EVM of -30dB for up to +18dBm 802.11a, and HyperLAN2 portable
output power in the 4.9-5.9GHz band. WLAN applications.
LX5506M features high gain of up
to 30dB with low quiescent current of
90mA, and high power added efficiency
IMPORTANT: For the most current data, consult MICROSEMIâs website: http://www.microsemi.com
KEY FEATURES
 Broadband 4.9-5.9GHz Operation
 Advanced InGaP HBT
 Single-Polarity 3.3V Supply
 Power Gain ~ 30dB at 5.25GHz
 Power Gain > ~28dB Across 4.9-
5.9GHz
 EVM ~ -30dB at Pout=+17dBm at
5.25GHz
 EVM ~ -30dB at Pout=+18dBm at
5.85GHz
 Total Current ~140mA for Pout =
+17dBm at 5.25GHz (For High Duty
Cycle of 90%)
 Maximum Linear Power ~ +22dBm
for OFDM Mask Compliance
 Maximum Linear Efficiency ~ 20%
 On-chip Output Power Detector with
Improved Frequency and Load-
VSWR Insensitivity
 On-Chip Input Match
 On-Chip RF Decoupling
 Simple Output Match for Optimal
Broadband EVM
 Small Footprint: 3x3mm2
 Low Profile: 0.9mm
APPLICATIONS
 FCC U-NII Wireless
 IEEE 802.11a
 HyperLAN2
 5GHz Cordless Phone
PRODUCT HIGHLIGHT
Copyright © 2005
Rev. 1.0a, 2005-11-02
PACKAGE ORDER INFO
TJ (°C)
Plastic MLPQ
LQ 16 pin
RoHS Compliant / Pb-free
0 to 70
LX5506MLQ
Note: Available in Tape & Reel. Append the letters âTRâ to the part
number. (i.e. LX5506MLQ-TR)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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