LX5503E Datasheet, PDF (1/9 Pages) Microsemi Corporation – InGaP HBT 4 - 6GHz Power Amplifier

LX5503E
TM
®
InGaP HBT 4 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5503E is a power amplifier For +18dBm OFDM output power
optimized for high-efficiency low- (64QAM, 54Mbps), the PA provides a
power applications in the FCC very low EVM (Error Vector Mag-
Unlicensed National Information nitude) of 3%, and consumes 150mA
Infrastructure (U-NII) band, Europe total DC current.
HyperLAN2, and Japan WLAN in the The LX5503E is available in a 16-
4.9-5.85GHz frequency range. The pin 3x3mm² micro-lead package
PA is implemented as a two-stage (MLP). The compact footprint, low
monolithic microwave integrated profile, and excellent thermal capability
circuit (MMIC) with active bias and of the micro-lead package make the
input/output pre-matching. The device LX5503E an ideal solution for
is manufactured with an InGaP/GaAs broadband, medium-gain power amp-
Heterojunction Bipolar Transistor lifier requirements for IEEE 802.11a,
(HBT) IC process (MOCVD). It and HiperLAN2 portable WLAN
operates at a single supply of 3.3V applications.
with +26dBm of P1dB, and power
gain of 21dB between 4.9-5.35GHz
and 16dB up to 5.85GHz.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
ƒ Advanced InGaP HBT
ƒ 4.9-5.85GHz Operation
ƒ Single-Polarity 3.3V Supply
ƒ Total Current ~ 150mA for
Pout=18dBm at 5.25GHz
ƒ P1dB ~ +26dBm across
4.9~5.85GHz
ƒ Power Gain ~ 21dB at 5.25GHz
& Pout=18dBm
ƒ Power Gain ~ 16dB at 5.85GHz
& Pout=18dBm
ƒ EVM ~ 3% for 64QAM/ 54Mbps
& Pout=18dBm
ƒ Excellent Temperature
Performance
ƒ Simple Input/Output Match
ƒ Minimal External Components
ƒ Optional low-cost LDO for
Optimal System Performance
ƒ Small Footprint: 3x3mm²
ƒ Low Profile: 0.9mm
APPLICATIONS/BENEFITS
ƒ FCC-UNII Wireless
ƒ IEEE 802.11a
ƒ HiperLAN2
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16-Pin
LX5503ELQ
RoHS Compliant / Pb-free Transition DC: 0418
Note: Available in Tape & Reel. Append the letters “TR” to the
part number.
(i.e. LX5503ELQ-TR)
This device is classified as ESD Level 0 in accordance with
JESD22-A114-B, (HBM) testing. Appropriate ESD procedures
should be observed when handling this device.
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
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