LX5503 Datasheet, PDF (1/13 Pages) Microsemi Corporation – InGaP HBT 5-6GHz Power Amplifier

INTEGRATED PRODUCTS
LX5503
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5503 is a power amplifier For +18dBm OFDM output power
optimized for the FCC Unlicensed (64QAM, 54Mbps), the PA provides a
National Information Infrastructure very low EVM (Error-Vector
(U-NII) band and HiperLAN2 Magnitude) of 4%, and consumes less
applications in the 5.15-5.85GHz than 200mA total DC current.
frequency range. The PA is im- The LX5503 is available in a 16-pin
plemented as a two-stage monolithic 3mmx3mm micro-lead package (MLP).
microwave integrated circuit (MMIC) The compact footprint, low profile, and
with active bias and input/output pre- excellent thermal capability of the MLP
matching. The device is manufactured package makes the LX5503 an ideal
with an InGaP/GaAs Heterojunction solution for broadband, medium-gain
Bipolar Transistor (HBT) IC process power amplifier requirements for IEEE
(MOCVD). It operates at a single low 802.11a, and Hiperlan2 portable WLAN
voltage supply of 3.3V with +25dBm applications.
of P1dB and 22dB power gain
between 5.15-5.35GHz and 18dB gain
up to 5.85GHz.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
5.15-5.85GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~100mA
P1dB ~ +25dBm across
5.15~5.85GHz
Power Gain ~ 22dB at 5.25GHz
& Pout=18dBm
Power Gain ~ 18dB at 5.85GHz
& Pout=18dBm
Total Current < 200mA for
Pout=18dBm
EVM ~ 4% for 64QAM/ 54Mbps
& Pout=18dBm
Excellent Temperature
Performance
Simple Input/Output Match
Minimal External Components
Small Footprint: 3x3mm²
Low Profile: 0.9mm
APPLICATIONS/BENEFITS
FCC U-NII Wireless
IEEE 802.11a
HiperLAN2
PRODUCT HIGHLIGHT
Copyright  2000
Rev. 1.1, 9/16/2002
PACKAGE ORDER INFO
T_J (°C)
Plastic
LQ _16-Pin
-40 to 85
LX5503-LQ
Note: Available in Tape & Reel (3K parts per reel).
Append the letter “T” to the part number.
(i.e. LX5503-LQT)
This device is classified as ESD Level 1 in accordance with MIL-
STD-883, Method 3015 (HBM) testing. Appropriate ESD procedures
should be observed when handling this device.
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
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