JTDB25 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – 25 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz

JTDB25
25 Watts, 36 Volts, Pulsed
Avionics, 960-1215 MHz
GENERAL DESCRIPTION
The JTDB25 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55AW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25ºC¹
Maximum Voltage and Current
BV_CES
BV_EBO
I_C
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
97W
55V
3.5V
5.0A
-65 to +200ºC
+200ºC
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
BV_EBO
BV_CES
h_FE
θ_JC1
Emitter – Base Breakdown
Collector – Emitter Breakdown
DC – Current Gain
Thermal Resistance
TEST CONDITIONS
I_E = 5 mA
I_C = 10 mA
I_C = 500mA, V_CE = 5V
MIN TYP MAX UNITS
3.5
V
55
V
20
1.8 ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C
Pout
Power Output
Pin
Power Input
Gain
Power Gain
RL
VSWR ²
Return Loss
Load Mismatch Tolerance
NOTES: 1. At Rated Pulse Conditions
2. At Rated Output Power
F=960-1215 MHz
Vcc = 36V
Pulse width = 10µs
DF=40%
F = 1090 MHz
Rev A: Dec 2009
25
W
5
W
7.0 7.5
8
dB
5:1
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.